Folder in cimlib tests
Explanation
This case aims to model an experiment of polycristalline silicon growth from a single seed. This experiment is available in refs [1,2] (see below). During its growth, the initial grain develops two facets with both lateral borders of the simulation domain. Multiple grains in twin relationship nucleate on these facets. This observation corresponds to the successive twinning process usually observed during silicon growth.
The main numerical parameters of this simulation are the mean activation undercooling, its standard deviation and the growth kinetic of the {111} facets. These parameters are determined using the in situ experimental observations available in refs [1,2] and are such as:
Parameter | Description | Value |
---|---|---|
$\Delta{T}^{\mu}_{\{111\}}$ | Mean activation undercooling for {111} facets | 2 K |
$\Delta{T}^{\sigma}_{\{111\}}$ | Standard deviation | 0.1 K |
$\Delta{T}^{E}_{N,T}$ | Twins nucleation undercooling at the edges of the domain | 2.1 K |
$\Delta{T}^{B}_{N,T}$ | Twins nucleation undercooling at grains boundaries grooves | 1.8 K |
$v^{c}_{\{111\}}$ | Growth kinetic of the {111} facets | 9 µm/s |
[1] T. Riberi-Béridot. “In situ characterization by X-ray synchrotron imaging of the solidification of silicon for the photovoltaic applications : control of the grain structure and interaction with the defects and the impurities”. PhD Thesis. Aix-Marseille Université, 2017.
http://www.theses.fr/2017AIXM0412
[2] V. Stamelou, M.G. Tsoutsouva, T. Riberi-Beridot, G. Reinhart, G. Regula, J. Baruchel et N. Mangelinck-Noël. “{111} facet growth laws and grain competition during silicon crystallization”. Journal of Crystal Growth 479 (2017), p. 1-8.
Outputs
The following maps are produced with MTEX. For more details, see https://wiki.sophia.mines-paristech.fr/doku.php?id=cemef_sp2:how_to_generate_ebsd_and_csl_maps_with_mtex
EBSD Maps
Respectively (left to right) in the x (growth), y (transverse to the surface) and z (perpendicular to the surface) directions.
CSL Map