This case aims to model polycristalline silicon growth from multiple initial seeds in a cubic domain of dimensions 5 $\times$ 5 $\times$ 5 $\text{cm}^3$.

Relevant numerical parameters are:

Parameter	Description	Value
$\Delta{T}^{\mu}_{\{111\}}$	Mean activation undercooling for {111} facets	1.8 K
$\Delta{T}^{\sigma}_{\{111\}}$	Standard deviation	0.2 K
$\Delta{T}^{E}_{N,T}$	Twins nucleation undercooling at the edges of the domain	2.5 K
$\Delta{T}^{B}_{N,T}$	Twins nucleation undercooling at grains boundaries grooves	2.5 K
$v^{c}_{\{111\}}$	Growth kinetic of the {111} facets	8 µm/s

Global grain structure

The field of interest is the misorientation with respect to the z-axis (perpendicular to the temperature gradient direction). The EBSD arrow corresponds to the direction of observation for the EBSD maps shown below.

The following maps are produced with MTEX. For more details, see https://wiki.sophia.mines-paristech.fr/doku.php?id=cemef_sp2:how_to_generate_ebsd_and_csl_maps_with_mtex

EBSD Maps

CSL Map